
BYM13-40HE3/96 Vishay General Semiconductor - Diodes Division

Description: DIODE SCHOTTKY 40V 1A GL41
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (GL41)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
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1500+ | 0.26 EUR |
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Technische Details BYM13-40HE3/96 Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A GL41, Packaging: Tape & Reel (TR), Package / Case: DO-213AB, MELF, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 110pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-213AB (GL41), Operating Temperature - Junction: -55°C ~ 125°C, Voltage - DC Reverse (Vr) (Max): 40 V, Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A, Current - Reverse Leakage @ Vr: 500 µA @ 40 V.
Weitere Produktangebote BYM13-40HE3/96 nach Preis ab 0.43 EUR bis 0.93 EUR
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BYM13-40HE3/96 | Hersteller : Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-213AB, MELF Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 110pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-213AB (GL41) Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V |
auf Bestellung 4758 Stücke: Lieferzeit 10-14 Tag (e) |
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BYM13-40HE3/96 | Hersteller : Vishay General Semiconductor |
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auf Bestellung 1323 Stücke: Lieferzeit 10-14 Tag (e) |