BYR5D-1200PJ WeEn Semiconductors
Hersteller: WeEn Semiconductors
Description: DIODE GEN PURP 1.2KV 5A DPAK
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DPAK
Current - Average Rectified (Io): 5A
Technology: Standard
Reverse Recovery Time (trr): 62 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Technische Details BYR5D-1200PJ WeEn Semiconductors
Description: DIODE GEN PURP 1.2KV 5A DPAK, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 50 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 5 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Operating Temperature - Junction: 175°C (Max), Supplier Device Package: DPAK, Current - Average Rectified (Io): 5A, Technology: Standard, Reverse Recovery Time (trr): 62 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63.
Weitere Produktangebote BYR5D-1200PJ
| Foto | Bezeichnung | Hersteller | Beschreibung |
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BYR5D-1200PJ | Hersteller : WeEn Semiconductors |
Rectifiers BYR5D-1200P/DPAK/REEL 13" Q1/T1 *STANDARD MARK SMD |
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