BYT30PI-1000RG STMicroelectronics

Description: DIODE GEN PURP 1KV 30A DOP3I, Packaging: Tube, Package / Case: DOP3I-2 Insulated (Straight Leads), Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 165 ns, Technology: Standard, Current - Average Rectified (Io): 30A, Supplier Device Package: DOP3I, Operating Temperature - Junction: -40°C ~ 150°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 30 A, Current - Reverse Leakage @ Vr: 100 µA @ 1000 V.