BYT53G-TAP Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 1.9A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.9A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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Technische Details BYT53G-TAP Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 1.9A SOD57, Packaging: Tape & Box (TB), Package / Case: SOD-57, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50 ns, Technology: Avalanche, Current - Average Rectified (Io): 1.9A, Supplier Device Package: SOD-57, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 400 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 400 V.
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BYT53G-TAP | Hersteller : Vishay Semiconductors |
Rectifiers 1.4 Amp 400 Volt 50 Amp IFSM |
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BYT53G-TAP | Hersteller : VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 1.9A; Ammo Pack; Ifsm: 50A; SOD57; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 1.9A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated Kind of package: Ammo Pack Max. forward impulse current: 50A Case: SOD57 Max. forward voltage: 0.9V Leakage current: 0.2mA Reverse recovery time: 50ns |
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