BYT54M-TAP Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes DivisionDescription: DIODE AVALANCHE 1KV 1.25A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.25A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.39 EUR |
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Technische Details BYT54M-TAP Vishay General Semiconductor - Diodes Division
Category: THT universal diodes, Description: Diode: rectifying; THT; 1kV; 1.25A; Ammo Pack; Ifsm: 30A; SOD57, Type of diode: rectifying, Mounting: THT, Max. off-state voltage: 1kV, Load current: 1.25A, Semiconductor structure: single diode, Features of semiconductor devices: avalanche breakdown effect; glass passivated, Kind of package: Ammo Pack, Max. forward impulse current: 30A, Case: SOD57, Max. forward voltage: 1.5V, Reverse recovery time: 100ns, Leakage current: 0.15mA, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote BYT54M-TAP nach Preis ab 0.28 EUR bis 1.36 EUR
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BYT54M-TAP | Hersteller : VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 1.25A; Ammo Pack; Ifsm: 30A; SOD57 Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1.25A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated Kind of package: Ammo Pack Max. forward impulse current: 30A Case: SOD57 Max. forward voltage: 1.5V Reverse recovery time: 100ns Leakage current: 0.15mA Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2354 Stücke: Lieferzeit 7-14 Tag (e) |
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BYT54M-TAP | Hersteller : VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 1.25A; Ammo Pack; Ifsm: 30A; SOD57 Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1.25A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated Kind of package: Ammo Pack Max. forward impulse current: 30A Case: SOD57 Max. forward voltage: 1.5V Reverse recovery time: 100ns Leakage current: 0.15mA |
auf Bestellung 2354 Stücke: Lieferzeit 14-21 Tag (e) |
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BYT54M-TAP | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1KV 1.25A SOD57 Packaging: Cut Tape (CT) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Technology: Avalanche Current - Average Rectified (Io): 1.25A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
auf Bestellung 5676 Stücke: Lieferzeit 10-14 Tag (e) |
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BYT54M-TAP | Hersteller : Vishay Semiconductors |
Rectifiers 1000 Volt 0.75 Amp 30 Amp IFSM |
auf Bestellung 13999 Stücke: Lieferzeit 10-14 Tag (e) |
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BYT54M-TAP | Hersteller : Vishay |
Rectifier Diode Switching 1KV 1.25A 100ns 2-Pin SOD-57 Ammo |
auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |