BYT54M-TAP Vishay Semiconductors
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.62 EUR |
| 10+ | 1.42 EUR |
| 100+ | 1.08 EUR |
| 500+ | 0.86 EUR |
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
3 Stücke
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Technische Details BYT54M-TAP Vishay Semiconductors
Description: DIODE AVALANCHE 1KV 1.25A SOD57, Packaging: Tape & Box (TB), Package / Case: SOD-57, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 100 ns, Technology: Avalanche, Current - Average Rectified (Io): 1.25A, Supplier Device Package: SOD-57, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 1000 V.
Weitere Produktangebote BYT54M-TAP nach Preis ab 1.56 EUR bis 4.49 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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BYT54M-TAP | Vishay General Semiconductor - Diodes Division |
 Description: DIODE AVALANCHE 1KV 1.25A SOD57Packaging: Cut Tape (CT) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Technology: Avalanche Current - Average Rectified (Io): 1.25A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
auf Bestellung 3531 Stücke: Lieferzeit 10-14 Tag (e) |
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BYT54M-TAP | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 1.25A; Ifsm: 30A; SOD57; Ammo Pack Type of diode: rectifying Max. off-state voltage: 1kV Load current: 1.25A Semiconductor structure: single diode Case: SOD57 Mounting: THT Max. forward voltage: 1.5V Max. forward impulse current: 30A Features of semiconductor devices: avalanche breakdown effect; glass passivated Kind of package: Ammo Pack Reverse recovery time: 100ns Leakage current: 0.15mA |
auf Bestellung 2700 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| BYT54M-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1.25A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.25A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE AVALANCHE 1KV 1.25A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.25A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 3531 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.49 EUR |
| 10+ | 2.88 EUR |
| 50+ | 2.18 EUR |
| 100+ | 1.95 EUR |
| 500+ | 1.56 EUR |
| BYT54M-TAP |
|
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1.25A; Ifsm: 30A; SOD57; Ammo Pack
Type of diode: rectifying
Max. off-state voltage: 1kV
Load current: 1.25A
Semiconductor structure: single diode
Case: SOD57
Mounting: THT
Max. forward voltage: 1.5V
Max. forward impulse current: 30A
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Kind of package: Ammo Pack
Reverse recovery time: 100ns
Leakage current: 0.15mA
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1.25A; Ifsm: 30A; SOD57; Ammo Pack
Type of diode: rectifying
Max. off-state voltage: 1kV
Load current: 1.25A
Semiconductor structure: single diode
Case: SOD57
Mounting: THT
Max. forward voltage: 1.5V
Max. forward impulse current: 30A
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Kind of package: Ammo Pack
Reverse recovery time: 100ns
Leakage current: 0.15mA
auf Bestellung 2700 Stücke:
Lieferzeit 14-21 Tag (e)