BYT56J-TAP Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 3A SOD64
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Technische Details BYT56J-TAP Vishay General Semiconductor - Diodes Division
Category: THT universal diodes, Description: Diode: rectifying; THT; 600V; 3A; Ifsm: 80A; SOD64; Ammo Pack; 100ns, Type of diode: rectifying, Mounting: THT, Max. off-state voltage: 0.6kV, Load current: 3A, Semiconductor structure: single diode, Features of semiconductor devices: avalanche breakdown effect; glass passivated, Max. forward impulse current: 80A, Case: SOD64, Kind of package: Ammo Pack, Max. forward voltage: 1.4V, Reverse recovery time: 100ns, Leakage current: 0.15mA.
Weitere Produktangebote BYT56J-TAP
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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BYT56J-TAP | Vishay Semiconductors |
Rectifiers 600 Volt 3.0 Amp 80 Amp IFSM |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 12500 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
BYT56J-TAP | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 3A; Ifsm: 80A; SOD64; Ammo Pack; 100ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 3A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated Max. forward impulse current: 80A Case: SOD64 Kind of package: Ammo Pack Max. forward voltage: 1.4V Reverse recovery time: 100ns Leakage current: 0.15mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BYT56J-TAP |
|
Hersteller: Vishay Semiconductors
Rectifiers 600 Volt 3.0 Amp 80 Amp IFSM
Rectifiers 600 Volt 3.0 Amp 80 Amp IFSM
Produkt ist nicht verfügbar
Mindestbestellmenge: 12500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BYT56J-TAP |
|
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; Ifsm: 80A; SOD64; Ammo Pack; 100ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Max. forward impulse current: 80A
Case: SOD64
Kind of package: Ammo Pack
Max. forward voltage: 1.4V
Reverse recovery time: 100ns
Leakage current: 0.15mA
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; Ifsm: 80A; SOD64; Ammo Pack; 100ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Max. forward impulse current: 80A
Case: SOD64
Kind of package: Ammo Pack
Max. forward voltage: 1.4V
Reverse recovery time: 100ns
Leakage current: 0.15mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH