
BYT56J-TAP VISHAY

Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; Ammo Pack; Ifsm: 80A; SOD64; 100ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Kind of package: Ammo Pack
Max. forward impulse current: 80A
Case: SOD64
Max. forward voltage: 1.4V
Reverse recovery time: 100ns
Leakage current: 0.15mA
Anzahl je Verpackung: 1 Stücke
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Technische Details BYT56J-TAP VISHAY
Category: THT universal diodes, Description: Diode: rectifying; THT; 600V; 3A; Ammo Pack; Ifsm: 80A; SOD64; 100ns, Type of diode: rectifying, Mounting: THT, Max. off-state voltage: 0.6kV, Load current: 3A, Semiconductor structure: single diode, Features of semiconductor devices: avalanche breakdown effect; glass passivated, Kind of package: Ammo Pack, Max. forward impulse current: 80A, Case: SOD64, Max. forward voltage: 1.4V, Reverse recovery time: 100ns, Leakage current: 0.15mA, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote BYT56J-TAP
Foto | Bezeichnung | Hersteller | Beschreibung |
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BYT56J-TAP | Hersteller : Vishay General Semiconductor - Diodes Division |
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BYT56J-TAP | Hersteller : Vishay Semiconductors |
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Produkt ist nicht verfügbar |
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BYT56J-TAP | Hersteller : VISHAY |
![]() Description: Diode: rectifying; THT; 600V; 3A; Ammo Pack; Ifsm: 80A; SOD64; 100ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 3A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated Kind of package: Ammo Pack Max. forward impulse current: 80A Case: SOD64 Max. forward voltage: 1.4V Reverse recovery time: 100ns Leakage current: 0.15mA |
Produkt ist nicht verfügbar |