BYV10MX-600PQ WeEn Semiconductor(Hong Kong)Co.,Limited
| Anzahl | Preis |
|---|---|
| 194+ | 0.75 EUR |
| 282+ | 0.49 EUR |
| 500+ | 0.37 EUR |
| 1000+ | 0.3 EUR |
| 2000+ | 0.24 EUR |
| 25000+ | 0.23 EUR |
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Technische Details BYV10MX-600PQ WeEn Semiconductor(Hong Kong)Co.,Limited
Description: DIODE STANDARD 600V 10A TO220F, Packaging: Tube, Package / Case: TO-220-2 Full Pack, Isolated Tab, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-220F, Operating Temperature - Junction: 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 2 V @ 10 A, Current - Reverse Leakage @ Vr: 10 µA @ 600 V.
Weitere Produktangebote BYV10MX-600PQ nach Preis ab 0.22 EUR bis 1.71 EUR
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BYV10MX-600PQ | Hersteller : WeEn Semiconductor(Hong Kong)Co.,Limited |
 Diode Switching 600V 10A 2-Pin(2+Tab) TO-220F |
auf Bestellung 62000 Stücke: Lieferzeit 14-21 Tag (e) |
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BYV10MX-600PQ | Hersteller : WeEn Semiconductors |
Rectifiers BYV10MX-600P/TO220F-2L/STANDARD MARKING * HORIZONTAL, RAIL PACK |
auf Bestellung 4344 Stücke: Lieferzeit 10-14 Tag (e) |
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BYV10MX-600PQ | Hersteller : WeEn Semiconductors |
Description: DIODE STANDARD 600V 10A TO220F Packaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-220F Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
Produkt ist nicht verfügbar |
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BYV10MX-600PQ | Hersteller : WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 100A; 35ns Type of diode: rectifying Case: SOD113; TO220FP-2 Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A Semiconductor structure: single diode Max. forward impulse current: 100A Kind of package: tube Reverse recovery time: 35ns Features of semiconductor devices: ultrafast switching |
Produkt ist nicht verfügbar |