BYV25FX-600,127 NXP USA Inc.
Hersteller: NXP USA Inc.Description: DIODE GEN PURP 600V 5A TO220F
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 4228 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 900+ | 0.54 EUR |
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Technische Details BYV25FX-600,127 NXP USA Inc.
Description: DIODE GEN PURP 600V 5A TO220FP, Packaging: Tube, Package / Case: TO-220-2 Full Pack, Isolated Tab, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Current - Average Rectified (Io): 5A, Supplier Device Package: TO-220FP, Operating Temperature - Junction: 150°C (Max), Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 5 A, Current - Reverse Leakage @ Vr: 50 µA @ 600 V.
Weitere Produktangebote BYV25FX-600,127 nach Preis ab 0.50 EUR bis 1.47 EUR
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auf Bestellung 2048 Stücke: Lieferzeit 10-14 Tag (e) |
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BYV25FX-600,127 | Hersteller : WeEn Semiconductors |
Description: DIODE GEN PURP 600V 5A TO220FP Packaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: TO-220FP Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 5 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
Produkt ist nicht verfügbar |