BYV27-050-TAP Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes DivisionDescription: DIODE AVALANCHE 55V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 55 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 55 V
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Technische Details BYV27-050-TAP Vishay General Semiconductor - Diodes Division
Category: THT universal diodes, Description: Diode: rectifying; THT; 50V; 2A; Ammo Pack; Ifsm: 50A; SOD57; 25ns, Type of diode: rectifying, Mounting: THT, Max. forward impulse current: 50A, Case: SOD57, Max. forward voltage: 1.07V, Reverse recovery time: 25ns, Max. off-state voltage: 50V, Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching, Semiconductor structure: single diode, Leakage current: 0.15mA, Load current: 2A, Max. load current: 15A, Kind of package: Ammo Pack.
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BYV27-050-TAP | Hersteller : Vishay Semiconductors |
Rectifiers 2.0 Amp 50 Volt 50 Amp IFSM |
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BYV27-050-TAP | Hersteller : VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 50V; 2A; Ammo Pack; Ifsm: 50A; SOD57; 25ns Type of diode: rectifying Mounting: THT Max. forward impulse current: 50A Case: SOD57 Max. forward voltage: 1.07V Reverse recovery time: 25ns Max. off-state voltage: 50V Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching Semiconductor structure: single diode Leakage current: 0.15mA Load current: 2A Max. load current: 15A Kind of package: Ammo Pack |
Produkt ist nicht verfügbar |