BYV28-150-TAP Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes DivisionDescription: DIODE AVALANCHE 150V 3.5A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 3.5A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.75 EUR |
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Technische Details BYV28-150-TAP Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 150V 3.5A SOD64, Packaging: Tape & Box (TB), Package / Case: SOD-64, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 30 ns, Technology: Avalanche, Current - Average Rectified (Io): 3.5A, Supplier Device Package: SOD-64, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 150 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A, Current - Reverse Leakage @ Vr: 1 µA @ 150 V.
Weitere Produktangebote BYV28-150-TAP nach Preis ab 0.84 EUR bis 2.9 EUR
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Description: DIODE AVALANCHE 150V 3.5A SOD64 Packaging: Cut Tape (CT) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Avalanche Current - Average Rectified (Io): 3.5A Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A Current - Reverse Leakage @ Vr: 1 µA @ 150 V |
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