BYV30W-600PQ WeEn Semiconductors
Hersteller: WeEn Semiconductors
Description: DIODE GEN PURP 600V 30A TO247-2
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 30A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
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Technische Details BYV30W-600PQ WeEn Semiconductors
Description: DIODE GEN PURP 600V 30A TO247-2, Current - Reverse Leakage @ Vr: 10 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 30 A, Voltage - DC Reverse (Vr) (Max): 600 V, Operating Temperature - Junction: 175°C (Max), Supplier Device Package: TO-247-2, Current - Average Rectified (Io): 30A, Technology: Standard, Reverse Recovery Time (trr): 75 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-2, Packaging: Tube.
Weitere Produktangebote BYV30W-600PQ
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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BYV30W-600PQ | Hersteller : WeEn Semiconductors |
Rectifiers BYV30W-600PQ/SOD142/STANDARD M |
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