Technische Details BYV30X-600PQ WeEn Semiconductors
Description: DIODE GEN PURP 600V 30A TO220FP, Packaging: Tube, Package / Case: TO-220-2 Full Pack, Isolated Tab, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 75 ns, Technology: Standard, Current - Average Rectified (Io): 30A, Supplier Device Package: TO-220FP, Operating Temperature - Junction: 175°C (Max), Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 30 A, Current - Reverse Leakage @ Vr: 10 µA @ 600 V.
Weitere Produktangebote BYV30X-600PQ
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| BYV30X-600PQ | Hersteller : WeEn Semiconductors |
 Description: DIODE GEN PURP 600V 30A TO220FPPackaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-220FP Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 30 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
Produkt ist nicht verfügbar |
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BYV30X-600PQ | Hersteller : WeEn Semiconductors |
Rectifiers BYV30X-600PQ/TO-220F/STANDARD M |
Produkt ist nicht verfügbar |