BYV38-TAP Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes DivisionDescription: DIODE AVALANCHE 1KV 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.37 EUR |
| 10000+ | 0.34 EUR |
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Technische Details BYV38-TAP Vishay General Semiconductor - Diodes Division
Category: THT universal diodes, Description: Diode: rectifying; THT; 1kV; 2A; Ammo Pack; Ifsm: 50A; SOD57; 300ns, Type of diode: rectifying, Mounting: THT, Max. off-state voltage: 1kV, Load current: 2A, Semiconductor structure: single diode, Features of semiconductor devices: avalanche breakdown effect; glass passivated, Kind of package: Ammo Pack, Max. forward impulse current: 50A, Case: SOD57, Max. forward voltage: 1.1V, Reverse recovery time: 300ns, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote BYV38-TAP nach Preis ab 0.29 EUR bis 1.27 EUR
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BYV38-TAP | Hersteller : VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 2A; Ammo Pack; Ifsm: 50A; SOD57; 300ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 2A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated Kind of package: Ammo Pack Max. forward impulse current: 50A Case: SOD57 Max. forward voltage: 1.1V Reverse recovery time: 300ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5326 Stücke: Lieferzeit 7-14 Tag (e) |
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BYV38-TAP | Hersteller : VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 2A; Ammo Pack; Ifsm: 50A; SOD57; 300ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 2A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated Kind of package: Ammo Pack Max. forward impulse current: 50A Case: SOD57 Max. forward voltage: 1.1V Reverse recovery time: 300ns |
auf Bestellung 5326 Stücke: Lieferzeit 14-21 Tag (e) |
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BYV38-TAP | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1KV 2A SOD57 Packaging: Cut Tape (CT) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Avalanche Current - Average Rectified (Io): 2A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
auf Bestellung 8857 Stücke: Lieferzeit 10-14 Tag (e) |
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BYV38-TAP | Hersteller : Vishay Semiconductors |
Rectifiers 2.0 Amp 1000 Volt 50 Amp IFSM |
auf Bestellung 23036 Stücke: Lieferzeit 10-14 Tag (e) |
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BYV38-TAP | Hersteller : Vishay |
Diode Switching 1KV 2A 2-Pin SOD-57 Ammo |
auf Bestellung 22015 Stücke: Lieferzeit 14-21 Tag (e) |
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BYV38-TAP Produktcode: 188006
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Dioden, Diodenbrücken, Zenerdioden > Gleichrichter- und Schaltdioden |
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