Technische Details BYV40W-600PQ WeEn Semiconductors
Description: DIODE GEN PURP 600V 40A TO247-2, Packaging: Bulk, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 79 ns, Technology: Standard, Current - Average Rectified (Io): 40A, Supplier Device Package: TO-247-2, Operating Temperature - Junction: 175°C (Max), Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 40 A, Current - Reverse Leakage @ Vr: 10 µA @ 600 V.
Weitere Produktangebote BYV40W-600PQ
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BYV40W-600PQ | Hersteller : WeEn Semiconductors |
![]() Packaging: Bulk Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 79 ns Technology: Standard Current - Average Rectified (Io): 40A Supplier Device Package: TO-247-2 Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 40 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
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BYV40W-600PQ | Hersteller : WeEn Semiconductors |
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