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BYV410-600,127

BYV410-600,127 WeEn Semiconductors

BYV410-600.pdf
Hersteller: WeEn Semiconductors
Description: DIODE ARRAY GP 600V 20A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 8420 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.57 EUR
50+1.74 EUR
100+1.57 EUR
500+1.25 EUR
1000+1.15 EUR
2000+1.07 EUR
5000+1 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details BYV410-600,127 WeEn Semiconductors

Description: DIODE ARRAY GP 600V 20A TO-220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 20A, Supplier Device Package: TO-220AB, Operating Temperature - Junction: 150°C (Max), Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 10 A, Current - Reverse Leakage @ Vr: 50 µA @ 600 V.

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