BYV410X-600PQ WeEn Semiconductors
Hersteller: WeEn SemiconductorsDescription: DIODE ARRAY GP 600V 20A TO-220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 7837 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.83 EUR |
| 50+ | 1.36 EUR |
| 100+ | 1.21 EUR |
| 500+ | 0.96 EUR |
| 1000+ | 0.88 EUR |
| 2000+ | 0.81 EUR |
| 5000+ | 0.74 EUR |
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Technische Details BYV410X-600PQ WeEn Semiconductors
Description: DIODE ARRAY GP 600V 20A TO-220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 55 ns, Technology: Standard, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 20A, Supplier Device Package: TO-220F, Operating Temperature - Junction: 175°C (Max), Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 16 A, Current - Reverse Leakage @ Vr: 10 µA @ 600 V.
Weitere Produktangebote BYV410X-600PQ
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| BYV410X-600PQ | Hersteller : Ween |
BYV410X-600P/TO-220F/STANDARD MARKING * HORIZONTAL |
Produkt ist nicht verfügbar |
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BYV410X-600PQ | Hersteller : WeEn Semiconductors |
Small Signal Switching Diodes BYV410X-600P/TO-220F/STANDARD MARKING * HORIZONTAL |
Produkt ist nicht verfügbar |