Produkte > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > BYVB32-200-E3/45
BYVB32-200-E3/45

BYVB32-200-E3/45 Vishay General Semiconductor - Diodes Division

byv32.pdf Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 18A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 18A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+4.11 EUR
10+ 3.7 EUR
100+ 2.98 EUR
500+ 2.44 EUR
1000+ 2.17 EUR
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Technische Details BYVB32-200-E3/45 Vishay General Semiconductor - Diodes Division

Description: DIODE ARRAY GP 200V 18A TO263AB, Packaging: Tube, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25 ns, Technology: Standard, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 18A, Supplier Device Package: TO-263AB (D²PAK), Operating Temperature - Junction: -65°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 20 A, Current - Reverse Leakage @ Vr: 10 µA @ 200 V.

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BYVB32-200-E3/45 BYVB32-200-E3/45 Hersteller : Vishay General Semiconductor byv32.pdf Rectifiers 200 Volt 18A 25ns Dual Common Cathode
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