BYW82-TAP Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes DivisionDescription: DIODE AVALANCHE 200V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7.5 µs
Technology: Avalanche
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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Technische Details BYW82-TAP Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 3A SOD64, Packaging: Tape & Box (TB), Package / Case: SOD-64, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 7.5 µs, Technology: Avalanche, Capacitance @ Vr, F: 60pF @ 4V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: SOD-64, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A, Current - Reverse Leakage @ Vr: 1 µA @ 200 V.
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BYW82-TAP | Hersteller : Vishay Semiconductors |
Rectifiers 3.0 Amp 200 Volt 100 Amp IFSM |
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BYW82-TAP | Hersteller : VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 3A; Ammo Pack; Ifsm: 100A; SOD64; 7.5us Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 3A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated Kind of package: Ammo Pack Max. forward impulse current: 100A Case: SOD64 Max. forward voltage: 1V Reverse recovery time: 7.5µs Capacitance: 60pF Leakage current: 10µA |
Produkt ist nicht verfügbar |