BYWB29-100-E3/45 Vishay General Semiconductor
| Anzahl | Preis |
|---|---|
| 2+ | 2.34 EUR |
| 10+ | 2.11 EUR |
| 100+ | 1.65 EUR |
| 500+ | 1.36 EUR |
| 1000+ | 1.1 EUR |
| 2000+ | 1.08 EUR |
| 5000+ | 1.07 EUR |
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Technische Details BYWB29-100-E3/45 Vishay General Semiconductor
Description: DIODE GEN PURP 100V 8A TO263AB, Current - Reverse Leakage @ Vr: 10 µA @ 100 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A, Voltage - DC Reverse (Vr) (Max): 100 V, Operating Temperature - Junction: -65°C ~ 150°C, Supplier Device Package: TO-263AB (D²PAK), Current - Average Rectified (Io): 8A, Technology: Standard, Reverse Recovery Time (trr): 25 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Tube.
Weitere Produktangebote BYWB29-100-E3/45
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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BYWB29-100-E3/45 | Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 100V 8A TO263ABCurrent - Reverse Leakage @ Vr: 10 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: TO-263AB (D²PAK) Current - Average Rectified (Io): 8A Technology: Standard Reverse Recovery Time (trr): 25 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| BYWB29-100-E3/45 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 8A TO263AB
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Description: DIODE GEN PURP 100V 8A TO263AB
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH