BZD17C47P R3G Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 47V 800MW SUB SMA
Current - Reverse Leakage @ Vr: 1 µA @ 36 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 45 Ohms
Voltage - Zener (Nom) (Vz): 47 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±6.38%
Packaging: Tape & Reel (TR)
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Technische Details BZD17C47P R3G Taiwan Semiconductor Corporation
Description: DIODE ZENER 47V 800MW SUB SMA, Current - Reverse Leakage @ Vr: 1 µA @ 36 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA, Power - Max: 800 mW, Supplier Device Package: Sub SMA, Impedance (Max) (Zzt): 45 Ohms, Voltage - Zener (Nom) (Vz): 47 V, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: DO-219AB, Tolerance: ±6.38%, Packaging: Tape & Reel (TR).
Weitere Produktangebote BZD17C47P R3G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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BZD17C47P R3G | Hersteller : Taiwan Semiconductor |
Zener Diodes 800mW, 6%, Zener Diode |
Produkt ist nicht verfügbar |