BZD27B36P-HE3-18 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 36V 800MW DO219AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 27 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Grade: Automotive
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 36 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produktrezensionen
Produktbewertung abgeben
Technische Details BZD27B36P-HE3-18 Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 36V 800MW DO219AB, Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 1 µA @ 27 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA, Power - Max: 800 mW, Grade: Automotive, Supplier Device Package: DO-219AB (SMF), Impedance (Max) (Zzt): 40 Ohms, Voltage - Zener (Nom) (Vz): 36 V, Operating Temperature: -65°C ~ 175°C, Mounting Type: Surface Mount, Package / Case: DO-219AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote BZD27B36P-HE3-18
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
BZD27B36P-HE3-18 | Hersteller : Vishay Semiconductors |
Zener Diodes ZENER SMF DO-219AB AEC-Q101 Qualified |
Produkt ist nicht verfügbar |