BZD27C4V3P-HE3-08 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.3V 800MW DO219AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Grade: Automotive
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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Technische Details BZD27C4V3P-HE3-08 Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.3V 800MW DO219AB, Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 25 µA @ 1 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA, Power - Max: 800 mW, Grade: Automotive, Supplier Device Package: DO-219AB (SMF), Impedance (Max) (Zzt): 7 Ohms, Voltage - Zener (Nom) (Vz): 4.3 V, Operating Temperature: -65°C ~ 175°C, Mounting Type: Surface Mount, Package / Case: DO-219AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote BZD27C4V3P-HE3-08 nach Preis ab 0.24 EUR bis 0.92 EUR
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BZD27C4V3P-HE3-08 | Vishay Semiconductors |
Zener Diodes ZENER DIODE SMF DO219-HE3 |
auf Bestellung 51 Stücke: Lieferzeit 10-14 Tag (e) |
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BZD27C4V3P-HE3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 4.3V 800MW DO219AB Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 25 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Power - Max: 800 mW Grade: Automotive Supplier Device Package: DO-219AB (SMF) Impedance (Max) (Zzt): 7 Ohms Voltage - Zener (Nom) (Vz): 4.3 V Operating Temperature: -65°C ~ 175°C Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Cut Tape (CT) |
auf Bestellung 26222 Stücke: Lieferzeit 10-14 Tag (e) |
|
| BZD27C4V3P-HE3-08 |
|
Hersteller: Vishay Semiconductors
Zener Diodes ZENER DIODE SMF DO219-HE3
Zener Diodes ZENER DIODE SMF DO219-HE3
auf Bestellung 51 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 0.82 EUR |
| 10+ | 0.7 EUR |
| 100+ | 0.49 EUR |
| 500+ | 0.38 EUR |
| 1000+ | 0.31 EUR |
| 2500+ | 0.26 EUR |
| 10000+ | 0.24 EUR |
| BZD27C4V3P-HE3-08 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.3V 800MW DO219AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Grade: Automotive
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
Description: DIODE ZENER 4.3V 800MW DO219AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Grade: Automotive
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
auf Bestellung 26222 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 23+ | 0.92 EUR |
| 31+ | 0.69 EUR |
| 100+ | 0.46 EUR |
| 500+ | 0.37 EUR |
| 1000+ | 0.32 EUR |