BZS55C5V6 RAG Taiwan Semiconductor
| Anzahl | Preis |
|---|---|
| 8+ | 0.39 EUR |
| 11+ | 0.27 EUR |
| 100+ | 0.17 EUR |
| 500+ | 0.11 EUR |
| 1000+ | 0.088 EUR |
| 2500+ | 0.077 EUR |
| 5000+ | 0.067 EUR |
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Technische Details BZS55C5V6 RAG Taiwan Semiconductor
Description: DIODE ZENER 5.6V 500MW 1206, Current - Reverse Leakage @ Vr: 100 nA @ 1 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA, Power - Max: 500 mW, Supplier Device Package: 1206, Impedance (Max) (Zzt): 30 Ohms, Voltage - Zener (Nom) (Vz): 5.6 V, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 1206 (3216 Metric), Tolerance: ±5%, Packaging: Tape & Reel (TR).
Weitere Produktangebote BZS55C5V6 RAG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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BZS55C5V6 RAG | Hersteller : Taiwan Semiconductor Corporation |
Description: DIODE ZENER 5.6V 500MW 1206Current - Reverse Leakage @ Vr: 100 nA @ 1 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA Power - Max: 500 mW Supplier Device Package: 1206 Impedance (Max) (Zzt): 30 Ohms Voltage - Zener (Nom) (Vz): 5.6 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 1206 (3216 Metric) Tolerance: ±5% Packaging: Tape & Reel (TR) |
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