BZT52B6V2-G RHG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.2V 410MW SOD123
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 6.2 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 410 mW
| Anzahl | Preis |
|---|---|
| 3000+ | 0.076 EUR |
| 6000+ | 0.068 EUR |
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Technische Details BZT52B6V2-G RHG Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.2V 410MW SOD123, Supplier Device Package: SOD-123, Impedance (Max) (Zzt): 10 Ohms, Voltage - Zener (Nom) (Vz): 6.2 V, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOD-123, Tolerance: ±2%, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 3 µA @ 4 V, Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA, Power - Max: 410 mW.
Weitere Produktangebote BZT52B6V2-G RHG nach Preis ab 0.081 EUR bis 0.39 EUR
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BZT52B6V2-G RHG | Hersteller : Taiwan Semiconductor |
Diode Zener Single 6.2V 2% 410mW 2-Pin SOD-123 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BZT52B6V2-G RHG | Hersteller : Taiwan Semiconductor Corporation |
Description: DIODE ZENER 6.2V 410MW SOD123 Current - Reverse Leakage @ Vr: 3 µA @ 4 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 410 mW Supplier Device Package: SOD-123 Impedance (Max) (Zzt): 10 Ohms Voltage - Zener (Nom) (Vz): 6.2 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123 Tolerance: ±2% Packaging: Cut Tape (CT) |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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