BZT52B8V2-G RHG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.2V 410MW SOD123
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 410 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 8.2 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.066 EUR |
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Technische Details BZT52B8V2-G RHG Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.2V 410MW SOD123, Current - Reverse Leakage @ Vr: 700 nA @ 5 V, Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA, Power - Max: 410 mW, Supplier Device Package: SOD-123, Impedance (Max) (Zzt): 15 Ohms, Voltage - Zener (Nom) (Vz): 8.2 V, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOD-123, Tolerance: ±2%, Packaging: Tape & Reel (TR).
Weitere Produktangebote BZT52B8V2-G RHG nach Preis ab 0.082 EUR bis 0.26 EUR
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BZT52B8V2-G RHG | Hersteller : Taiwan Semiconductor Corporation |
Description: DIODE ZENER 8.2V 410MW SOD123 Current - Reverse Leakage @ Vr: 700 nA @ 5 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 410 mW Supplier Device Package: SOD-123 Impedance (Max) (Zzt): 15 Ohms Voltage - Zener (Nom) (Vz): 8.2 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123 Tolerance: ±2% Packaging: Cut Tape (CT) |
auf Bestellung 5898 Stücke: Lieferzeit 10-14 Tag (e) |
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