BZT52C3V9-G Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.9V 350MW SOD123
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 350 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 3.9 V
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Technische Details BZT52C3V9-G Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.9V 350MW SOD123, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOD-123, Tolerance: ±5%, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 3 µA @ 1 V, Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA, Power - Max: 350 mW, Supplier Device Package: SOD-123, Impedance (Max) (Zzt): 90 Ohms, Voltage - Zener (Nom) (Vz): 3.9 V.