BZW06-33B R0 TAIWAN SEMICONDUCTOR
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 39V; 11.1A; bidirectional; ±5%; DO204AC; 600W
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 11.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO204AC
Mounting: THT
Leakage current: 1µA
| Anzahl | Preis |
|---|---|
| 256+ | 0.28 EUR |
| 317+ | 0.23 EUR |
| 360+ | 0.2 EUR |
| 500+ | 0.19 EUR |
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Technische Details BZW06-33B R0 TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes, Description: Diode: TVS; 39V; 11.1A; bidirectional; ±5%; DO204AC; 600W, Type of diode: TVS, Peak pulse power dissipation: 0.6kW, Max. off-state voltage: 33.3V, Breakdown voltage: 39V, Max. forward impulse current: 11.1A, Semiconductor structure: bidirectional, Tolerance: ±5%, Case: DO204AC, Mounting: THT, Leakage current: 1µA.
Weitere Produktangebote BZW06-33B R0
| Foto | Bezeichnung | Hersteller | Beschreibung |
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BZW06-33B R0 | Hersteller : Taiwan Semiconductor | ESD Protection Diodes / TVS Diodes 600W, 42.1V, -%, Bidirectional, TVS |
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