BZX55B33-TAP Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 33V 500MW DO35
Current - Reverse Leakage @ Vr: 100 nA @ 24 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 33 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Tape & Box (TB)
Qualification: AEC-Q101
Grade: Automotive
| Anzahl | Privatkunde |
|---|---|
| 10000+ | 0.054 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
10000 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details BZX55B33-TAP Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 33V 500MW DO35, Current - Reverse Leakage @ Vr: 100 nA @ 24 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA, Power - Max: 500 mW, Part Status: Active, Supplier Device Package: DO-204AH (DO-35), Impedance (Max) (Zzt): 80 Ohms, Voltage - Zener (Nom) (Vz): 33 V, Operating Temperature: -65°C ~ 175°C, Mounting Type: Through Hole, Package / Case: DO-204AH, DO-35, Axial, Tolerance: ±2%, Packaging: Tape & Box (TB), Qualification: AEC-Q101, Grade: Automotive.
Weitere Produktangebote BZX55B33-TAP
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
|
|
BZX55B33-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 33V 500MW DO35 Current - Reverse Leakage @ Vr: 100 nA @ 24 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Power - Max: 500 mW Part Status: Active Supplier Device Package: DO-204AH (DO-35) Impedance (Max) (Zzt): 80 Ohms Voltage - Zener (Nom) (Vz): 33 V Operating Temperature: -65°C ~ 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±2% Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BZX55B33-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 33V 500MW DO35
Current - Reverse Leakage @ Vr: 100 nA @ 24 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 33 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE ZENER 33V 500MW DO35
Current - Reverse Leakage @ Vr: 100 nA @ 24 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 33 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH