BZX884B18L-HG3-08 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes DivisionDescription: DIODE ZENER 18V 300MW DFN1006-2A
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: DFN1006-2A
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2349 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 63+ | 0.28 EUR |
| 90+ | 0.2 EUR |
| 207+ | 0.085 EUR |
| 500+ | 0.081 EUR |
| 1000+ | 0.074 EUR |
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Technische Details BZX884B18L-HG3-08 Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 300MW DFN1006-2A, Packaging: Tape & Reel (TR), Tolerance: ±2%, Package / Case: 0402 (1006 Metric), Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Voltage - Zener (Nom) (Vz): 18 V, Impedance (Max) (Zzt): 45 Ohms, Supplier Device Package: DFN1006-2A, Part Status: Active, Power - Max: 300 mW, Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA, Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BZX884B18L-HG3-08 nach Preis ab 0.053 EUR bis 0.63 EUR
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BZX884B18L-HG3-08 | Hersteller : Vishay |
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BZX884B18L-HG3-08 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 18V 300MW DFN1006-2A Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 45 Ohms Supplier Device Package: DFN1006-2A Part Status: Active Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V Grade: Automotive Qualification: AEC-Q101 |
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