C2M0025120D Wolfspeed, Inc.
Hersteller: Wolfspeed, Inc.
Description: SICFET N-CH 1200V 90A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
Power Dissipation (Max): 463W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 10mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2788 pF @ 1000 V
Description: SICFET N-CH 1200V 90A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
Power Dissipation (Max): 463W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 10mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2788 pF @ 1000 V
auf Bestellung 373 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 159.83 EUR |
30+ | 139.2 EUR |
120+ | 131.99 EUR |
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Technische Details C2M0025120D Wolfspeed, Inc.
Description: SICFET N-CH 1200V 90A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V, Power Dissipation (Max): 463W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 10mA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 2788 pF @ 1000 V.
Weitere Produktangebote C2M0025120D nach Preis ab 197.47 EUR bis 237.74 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
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C2M0025120D | Hersteller : Wolfspeed | MOSFET SIC MOSFET 1200V RDS ON 25 mOhm |
auf Bestellung 306 Stücke: Lieferzeit 14-28 Tag (e) |
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C2M0025120D | Hersteller : WOLFSPEED |
Description: WOLFSPEED - C2M0025120D - Siliziumkarbid-MOSFET, Eins, n-Kanal, 90 A, 1.2 kV, 0.025 ohm, TO-247 tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: Y-EX Dauer-Drainstrom Id: 90A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.4V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 463W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 20V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.025ohm |
auf Bestellung 418 Stücke: Lieferzeit 14-21 Tag (e) |
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C2M0025120D | Hersteller : Wolfspeed | Trans MOSFET N-CH SiC 1.2KV 63A 3-Pin(3+Tab) TO-247 |
auf Bestellung 576 Stücke: Lieferzeit 14-21 Tag (e) |
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C2M0025120D Produktcode: 117277 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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C2M0025120D | Hersteller : Wolfspeed(CREE) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 90A; 463W; TO247-3; 45ns Type of transistor: N-MOSFET Technology: SiC; Z-FET™ Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 90A Power dissipation: 463W Case: TO247-3 Gate-source voltage: -10...25V On-state resistance: 25mΩ Mounting: THT Gate charge: 161nC Kind of channel: enhanced Reverse recovery time: 45ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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C2M0025120D | Hersteller : Wolfspeed(CREE) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 90A; 463W; TO247-3; 45ns Type of transistor: N-MOSFET Technology: SiC; Z-FET™ Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 90A Power dissipation: 463W Case: TO247-3 Gate-source voltage: -10...25V On-state resistance: 25mΩ Mounting: THT Gate charge: 161nC Kind of channel: enhanced Reverse recovery time: 45ns |
Produkt ist nicht verfügbar |