Weitere Produktangebote C2M0080120D nach Preis ab 31.66 EUR bis 50.35 EUR
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C2M0080120D | Wolfspeed, Inc. |
 Description: SICFET N-CH 1200V 36A TO247-3Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 1000 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 5 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +25V, -10V Drive Voltage (Max Rds On, Min Rds On): 20V Part Status: Not For New Designs Supplier Device Package: TO-247-3 Vgs(th) (Max) @ Id: 4V @ 5mA Power Dissipation (Max): 192W (Tc) Rds On (Max) @ Id, Vgs: 98mOhm @ 20A, 20V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Bulk |
auf Bestellung 295 Stücke: Lieferzeit 10-14 Tag (e) |
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| C2M0080120D | Cree/Wolfspeed |
N-канальний ПТ SIC MOSFET, Udss, В = 1 200, Id = 31,6 А, Ptot, Вт = 208, Тип монт. = вивідний, Ciss, пФ @ Uds, В = 950 @ 1000, Qg, нКл = 49,2 @ 20, Rds = 98 мОм @ 20А, 20В, Tексп, °C = -55...+150, Ugs(th) = 2.2 В @ 1 мА,... Транзистори Корпус: TO-247-3 Од Anzahl je Verpackung: 30 Stücke |
verfügbar 1 Stücke: |
Im Einkaufswagen Stück im Wert von UAH |
| C2M0080120D |
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Hersteller: Wolfspeed, Inc.
Description: SICFET N-CH 1200V 36A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 5 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Part Status: Not For New Designs
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4V @ 5mA
Power Dissipation (Max): 192W (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 20A, 20V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Description: SICFET N-CH 1200V 36A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 5 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Part Status: Not For New Designs
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4V @ 5mA
Power Dissipation (Max): 192W (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 20A, 20V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
auf Bestellung 295 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 50.35 EUR |
| 30+ | 32.78 EUR |
| 120+ | 31.66 EUR |
| C2M0080120D |
|
Hersteller: Cree/Wolfspeed
N-канальний ПТ SIC MOSFET, Udss, В = 1 200, Id = 31,6 А, Ptot, Вт = 208, Тип монт. = вивідний, Ciss, пФ @ Uds, В = 950 @ 1000, Qg, нКл = 49,2 @ 20, Rds = 98 мОм @ 20А, 20В, Tексп, °C = -55...+150, Ugs(th) = 2.2 В @ 1 мА,... Транзистори Корпус: TO-247-3 Од
Anzahl je Verpackung: 30 Stücke
N-канальний ПТ SIC MOSFET, Udss, В = 1 200, Id = 31,6 А, Ptot, Вт = 208, Тип монт. = вивідний, Ciss, пФ @ Uds, В = 950 @ 1000, Qg, нКл = 49,2 @ 20, Rds = 98 мОм @ 20А, 20В, Tексп, °C = -55...+150, Ugs(th) = 2.2 В @ 1 мА,... Транзистори Корпус: TO-247-3 Од
Anzahl je Verpackung: 30 Stücke
verfügbar 1 Stücke: