| Anzahl | Preis |
|---|---|
| 2+ | 2.52 EUR |
| 10+ | 1.72 EUR |
| 100+ | 1.16 EUR |
| 500+ | 0.91 EUR |
| 1000+ | 0.83 EUR |
| 2500+ | 0.67 EUR |
| 10000+ | 0.63 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details C3D02065E-TR Wolfspeed
Description: DIODE SIL CARBIDE 650V 8A TO2522, Current - Reverse Leakage @ Vr: 50 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-252-2, Current - Average Rectified (Io): 8A, Capacitance @ Vr, F: 120pF @ 0V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote C3D02065E-TR nach Preis ab 1.17 EUR bis 2.75 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
C3D02065E-TR | Wolfspeed, Inc. |
 Description: DIODE SIL CARBIDE 650V 8A TO2522Current - Reverse Leakage @ Vr: 50 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-252-2 Current - Average Rectified (Io): 8A Capacitance @ Vr, F: 120pF @ 0V, 1MHz Technology: SiC (Silicon Carbide) Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 370 Stücke: Lieferzeit 10-14 Tag (e) |
|
| C3D02065E-TR |
|
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARBIDE 650V 8A TO2522
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: DIODE SIL CARBIDE 650V 8A TO2522
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 370 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.75 EUR |
| 11+ | 1.75 EUR |
| 100+ | 1.17 EUR |