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Technische Details C3D04065E Wolfspeed
Description: DIODE SIL CARB 650V 13.5A TO2522, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 251pF @ 0V, 1MHz, Current - Average Rectified (Io): 13.5A, Supplier Device Package: TO-252-2, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A, Current - Reverse Leakage @ Vr: 60 µA @ 650 V.
Weitere Produktangebote C3D04065E nach Preis ab 1.42 EUR bis 8.94 EUR
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C3D04065E | Wolfspeed, Inc. |
 Description: DIODE SIL CARB 650V 13.5A TO2522Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 251pF @ 0V, 1MHz Current - Average Rectified (Io): 13.5A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A Current - Reverse Leakage @ Vr: 60 µA @ 650 V |
auf Bestellung 1612 Stücke: Lieferzeit 10-14 Tag (e) |
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C3D04065E | Wolfspeed(CREE) |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; 52W; C3D Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Max. forward voltage: 1.8V Power dissipation: 52W Manufacturer series: C3D |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
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| C3D04065E |
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Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 13.5A TO2522
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 251pF @ 0V, 1MHz
Current - Average Rectified (Io): 13.5A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Description: DIODE SIL CARB 650V 13.5A TO2522
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 251pF @ 0V, 1MHz
Current - Average Rectified (Io): 13.5A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
auf Bestellung 1612 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 4.33 EUR |
| 75+ | 2.01 EUR |
| 150+ | 1.82 EUR |
| 525+ | 1.54 EUR |
| 1050+ | 1.42 EUR |
| C3D04065E |
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Hersteller: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; 52W; C3D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Power dissipation: 52W
Manufacturer series: C3D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; 52W; C3D
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Power dissipation: 52W
Manufacturer series: C3D
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 8.94 EUR |