Technische Details C3M0015065D Wolfspeed
Description: SICFET N-CH 650V 120A TO247-3, Input Capacitance (Ciss) (Max) @ Vds: 5011 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 15 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): +15V, -4V, Drive Voltage (Max Rds On, Min Rds On): 15V, Part Status: Active, Supplier Device Package: TO-247-3, Vgs(th) (Max) @ Id: 3.6V @ 15.5mA, Power Dissipation (Max): 416W (Tc), Rds On (Max) @ Id, Vgs: 21mOhm @ 55.8A, 15V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote C3M0015065D nach Preis ab 53.51 EUR bis 78.97 EUR
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C3M0015065D | Wolfspeed, Inc. |
 Description: SICFET N-CH 650V 120A TO247-3Input Capacitance (Ciss) (Max) @ Vds: 5011 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 15 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +15V, -4V Drive Voltage (Max Rds On, Min Rds On): 15V Part Status: Active Supplier Device Package: TO-247-3 Vgs(th) (Max) @ Id: 3.6V @ 15.5mA Power Dissipation (Max): 416W (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 55.8A, 15V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
auf Bestellung 320 Stücke: Lieferzeit 10-14 Tag (e) |
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Hersteller: Wolfspeed, Inc.
Description: SICFET N-CH 650V 120A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 5011 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 15 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +15V, -4V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 3.6V @ 15.5mA
Power Dissipation (Max): 416W (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 55.8A, 15V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: SICFET N-CH 650V 120A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 5011 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 15 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +15V, -4V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 3.6V @ 15.5mA
Power Dissipation (Max): 416W (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 55.8A, 15V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 320 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 78.97 EUR |
| 30+ | 53.72 EUR |
| 120+ | 53.51 EUR |