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Technische Details C3M0016120D Wolfspeed
Description: SICFET N-CH 1200V 115A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 115A (Tc), Rds On (Max) @ Id, Vgs: 22.3mOhm @ 75A, 15V, Power Dissipation (Max): 556W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 23mA, Supplier Device Package: TO-247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +15V, -4V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 6085 pF @ 1000 V.
Weitere Produktangebote C3M0016120D
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| C3M0016120D | CREE |
 1200V, 16 MOHM, G3 SIC MOSFET Транзистори |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
C3M0016120D | Wolfspeed, Inc. |
Description: SICFET N-CH 1200V 115A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 115A (Tc) Rds On (Max) @ Id, Vgs: 22.3mOhm @ 75A, 15V Power Dissipation (Max): 556W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 23mA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +15V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 6085 pF @ 1000 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| C3M0016120D |
|
Hersteller: CREE
1200V, 16 MOHM, G3 SIC MOSFET Транзистори
1200V, 16 MOHM, G3 SIC MOSFET Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| C3M0016120D |
|
Hersteller: Wolfspeed, Inc.
Description: SICFET N-CH 1200V 115A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Rds On (Max) @ Id, Vgs: 22.3mOhm @ 75A, 15V
Power Dissipation (Max): 556W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 23mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 6085 pF @ 1000 V
Description: SICFET N-CH 1200V 115A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Rds On (Max) @ Id, Vgs: 22.3mOhm @ 75A, 15V
Power Dissipation (Max): 556W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 23mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 6085 pF @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH