Technische Details C3M0016120K1 Wolfspeed
Description: MOSFET N-CH 1200V 125A TO247-4L, Input Capacitance (Ciss) (Max) @ Vds: 6922 pF @ 1000 V, Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 15 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +19V, -8V, Drive Voltage (Max Rds On, Min Rds On): 15V, Supplier Device Package: TO-247-4L, Vgs(th) (Max) @ Id: 3.8V @ 22.08mA, Power Dissipation (Max): 483W (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 80.28A, 15V, Current - Continuous Drain (Id) @ 25°C: 125A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Packaging: Bulk.
Weitere Produktangebote C3M0016120K1 nach Preis ab 55.5 EUR bis 81.36 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||
|---|---|---|---|---|---|---|---|---|---|
 |
C3M0016120K1 | Wolfspeed, Inc. |
 Description: MOSFET N-CH 1200V 125A TO247-4LInput Capacitance (Ciss) (Max) @ Vds: 6922 pF @ 1000 V Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 15 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +19V, -8V Drive Voltage (Max Rds On, Min Rds On): 15V Supplier Device Package: TO-247-4L Vgs(th) (Max) @ Id: 3.8V @ 22.08mA Power Dissipation (Max): 483W (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 80.28A, 15V Current - Continuous Drain (Id) @ 25°C: 125A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Packaging: Bulk |
auf Bestellung 353 Stücke: Lieferzeit 10-14 Tag (e) |
|
| C3M0016120K1 |
|
Hersteller: Wolfspeed, Inc.
Description: MOSFET N-CH 1200V 125A TO247-4L
Input Capacitance (Ciss) (Max) @ Vds: 6922 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +19V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 3.8V @ 22.08mA
Power Dissipation (Max): 483W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 80.28A, 15V
Current - Continuous Drain (Id) @ 25°C: 125A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Bulk
Description: MOSFET N-CH 1200V 125A TO247-4L
Input Capacitance (Ciss) (Max) @ Vds: 6922 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +19V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 3.8V @ 22.08mA
Power Dissipation (Max): 483W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 80.28A, 15V
Current - Continuous Drain (Id) @ 25°C: 125A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Bulk
auf Bestellung 353 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 81.36 EUR |
| 30+ | 55.5 EUR |