C3M0021120K1 Wolfspeed
| Anzahl | Privatkunde |
|---|---|
| 1+ | 30.87 EUR |
| 10+ | 18.08 EUR |
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Technische Details C3M0021120K1 Wolfspeed
Description: MOSFET N-CH 1200V 104A TO247-4L, Packaging: Bulk, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 104A (Tc), Rds On (Max) @ Id, Vgs: 29mOhm @ 62.1A, 15V, Power Dissipation (Max): 405W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 17.1mA, Supplier Device Package: TO-247-4L, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +19V, -8V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 1000 V.
Weitere Produktangebote C3M0021120K1 nach Preis ab 29.87 EUR bis 51.21 EUR
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C3M0021120K1 | Wolfspeed |
 Trans MOSFET N-CH SiC 1.2KV 104A 4-Pin(4+Tab) TO-247 |
auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
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C3M0021120K1 | Wolfspeed |
Trans MOSFET N-CH SiC 1.2KV 104A 4-Pin(4+Tab) TO-247 |
auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
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C3M0021120K1 | Wolfspeed, Inc. |
Description: MOSFET N-CH 1200V 104A TO247-4L Packaging: Bulk Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 104A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 62.1A, 15V Power Dissipation (Max): 405W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 17.1mA Supplier Device Package: TO-247-4L Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 1000 V |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
|
| C3M0021120K1 |
|
Hersteller: Wolfspeed
Trans MOSFET N-CH SiC 1.2KV 104A 4-Pin(4+Tab) TO-247
Trans MOSFET N-CH SiC 1.2KV 104A 4-Pin(4+Tab) TO-247
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 43.61 EUR |
| 10+ | 42.65 EUR |
| 25+ | 41.42 EUR |
| 50+ | 40.17 EUR |
| 100+ | 39.26 EUR |
| C3M0021120K1 |
|
Hersteller: Wolfspeed
Trans MOSFET N-CH SiC 1.2KV 104A 4-Pin(4+Tab) TO-247
Trans MOSFET N-CH SiC 1.2KV 104A 4-Pin(4+Tab) TO-247
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 43.61 EUR |
| 10+ | 41.72 EUR |
| 25+ | 39.89 EUR |
| 50+ | 38.04 EUR |
| 100+ | 36.24 EUR |
| C3M0021120K1 |
|
Hersteller: Wolfspeed, Inc.
Description: MOSFET N-CH 1200V 104A TO247-4L
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 62.1A, 15V
Power Dissipation (Max): 405W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 17.1mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 1000 V
Description: MOSFET N-CH 1200V 104A TO247-4L
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 62.1A, 15V
Power Dissipation (Max): 405W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 17.1mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 1000 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 51.21 EUR |
| 30+ | 33.03 EUR |
| 120+ | 29.87 EUR |