C3M0021120K1 Wolfspeed
| Anzahl | Preis |
|---|---|
| 1+ | 41.43 EUR |
| 10+ | 34.62 EUR |
| 120+ | 30.29 EUR |
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Technische Details C3M0021120K1 Wolfspeed
Description: MOSFET N-CH 1200V 104A TO247-4L, Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 1000 V, Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 15 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +19V, -8V, Drive Voltage (Max Rds On, Min Rds On): 15V, Supplier Device Package: TO-247-4L, Vgs(th) (Max) @ Id: 3.8V @ 17.1mA, Power Dissipation (Max): 405W (Tc), Rds On (Max) @ Id, Vgs: 29mOhm @ 62.1A, 15V, Current - Continuous Drain (Id) @ 25°C: 104A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Packaging: Bulk.
Weitere Produktangebote C3M0021120K1 nach Preis ab 25.1 EUR bis 43.03 EUR
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C3M0021120K1 | Wolfspeed, Inc. |
 Description: MOSFET N-CH 1200V 104A TO247-4LInput Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 1000 V Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 15 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +19V, -8V Drive Voltage (Max Rds On, Min Rds On): 15V Supplier Device Package: TO-247-4L Vgs(th) (Max) @ Id: 3.8V @ 17.1mA Power Dissipation (Max): 405W (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 62.1A, 15V Current - Continuous Drain (Id) @ 25°C: 104A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Packaging: Bulk |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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| C3M0021120K1 |
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Hersteller: Wolfspeed, Inc.
Description: MOSFET N-CH 1200V 104A TO247-4L
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +19V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 3.8V @ 17.1mA
Power Dissipation (Max): 405W (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 62.1A, 15V
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Bulk
Description: MOSFET N-CH 1200V 104A TO247-4L
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +19V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 3.8V @ 17.1mA
Power Dissipation (Max): 405W (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 62.1A, 15V
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Bulk
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 43.03 EUR |
| 30+ | 27.76 EUR |
| 120+ | 25.1 EUR |