Produkte > WOLFSPEED, INC. > C3M0025065J1-TR
C3M0025065J1-TR

C3M0025065J1-TR Wolfspeed, Inc.

Wolfspeed_C3M0025065J1_data_sheet.pdf
Hersteller: Wolfspeed, Inc.
Description: SIC, MOSFET 25 M, 650V TO-263-7X
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 15 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +19V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 3.6V @ 9.22mA
Power Dissipation (Max): 271W (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
auf Bestellung 760 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+31.26 EUR
10+22.37 EUR
100+20.54 EUR
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details C3M0025065J1-TR Wolfspeed, Inc.

Description: SIC, MOSFET 25 M, 650V TO-263-7X, Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 15 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): +19V, -8V, Drive Voltage (Max Rds On, Min Rds On): 15V, Supplier Device Package: TO-263-7, Vgs(th) (Max) @ Id: 3.6V @ 9.22mA, Power Dissipation (Max): 271W (Tc), Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Packaging: Tape & Reel (TR).

Weitere Produktangebote C3M0025065J1-TR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
C3M0025065J1-TR C3M0025065J1-TR Wolfspeed, Inc. Wolfspeed_C3M0025065J1_data_sheet.pdf Description: SIC, MOSFET 25 M, 650V TO-263-7X
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 15 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +19V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 3.6V @ 9.22mA
Power Dissipation (Max): 271W (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
C3M0025065J1-TR C3M0025065J1-TR Wolfspeed Wolfspeed_C3M0025065J1_data_sheet.pdf SiC MOSFETs SiC, MOSFET 25 mohm, 650V TO-263-7XL, T&R, Industrial
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
C3M0025065J1-TR Wolfspeed_C3M0025065J1_data_sheet.pdf
C3M0025065J1-TR
Hersteller: Wolfspeed, Inc.
Description: SIC, MOSFET 25 M, 650V TO-263-7X
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 15 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +19V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 3.6V @ 9.22mA
Power Dissipation (Max): 271W (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
C3M0025065J1-TR Wolfspeed_C3M0025065J1_data_sheet.pdf
C3M0025065J1-TR
Hersteller: Wolfspeed
SiC MOSFETs SiC, MOSFET 25 mohm, 650V TO-263-7XL, T&R, Industrial
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH