C3M0025065J1-TR Wolfspeed, Inc.
Hersteller: Wolfspeed, Inc.
Description: SIC, MOSFET 25 M, 650V TO-263-7X
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 15 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +19V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 3.6V @ 9.22mA
Power Dissipation (Max): 271W (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
| Anzahl | Privatkunde |
|---|---|
| 1+ | 23.79 EUR |
| 10+ | 16.64 EUR |
| 100+ | 14.6 EUR |
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Technische Details C3M0025065J1-TR Wolfspeed, Inc.
Description: SIC, MOSFET 25 M, 650V TO-263-7X, Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 15 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): +19V, -8V, Drive Voltage (Max Rds On, Min Rds On): 15V, Supplier Device Package: TO-263-7, Vgs(th) (Max) @ Id: 3.6V @ 9.22mA, Power Dissipation (Max): 271W (Tc), Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Packaging: Tape & Reel (TR).
Weitere Produktangebote C3M0025065J1-TR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
C3M0025065J1-TR | Wolfspeed |
Trans MOSFET N-CH SiC 650V 80A 8-Pin(7+Tab) TO-263 T/R |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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C3M0025065J1-TR | Wolfspeed, Inc. |
Description: SIC, MOSFET 25 M, 650V TO-263-7X Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 15 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +19V, -8V Drive Voltage (Max Rds On, Min Rds On): 15V Supplier Device Package: TO-263-7 Vgs(th) (Max) @ Id: 3.6V @ 9.22mA Power Dissipation (Max): 271W (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
C3M0025065J1-TR | Wolfspeed |
SiC MOSFETs SiC, MOSFET 25 mohm, 650V TO-263-7XL, T&R, Industrial |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
| C3M0025065J1-TR |
|
Hersteller: Wolfspeed
Trans MOSFET N-CH SiC 650V 80A 8-Pin(7+Tab) TO-263 T/R
Trans MOSFET N-CH SiC 650V 80A 8-Pin(7+Tab) TO-263 T/R
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| C3M0025065J1-TR |
|
Hersteller: Wolfspeed, Inc.
Description: SIC, MOSFET 25 M, 650V TO-263-7X
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 15 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +19V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 3.6V @ 9.22mA
Power Dissipation (Max): 271W (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Description: SIC, MOSFET 25 M, 650V TO-263-7X
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 15 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +19V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 3.6V @ 9.22mA
Power Dissipation (Max): 271W (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| C3M0025065J1-TR |
|
Hersteller: Wolfspeed
SiC MOSFETs SiC, MOSFET 25 mohm, 650V TO-263-7XL, T&R, Industrial
SiC MOSFETs SiC, MOSFET 25 mohm, 650V TO-263-7XL, T&R, Industrial
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH