C3M0025065K Wolfspeed, Inc.

Description: GEN 3 650V 25 M SIC MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 600 V, Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 15 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): +19V, -8V, Drive Voltage (Max Rds On, Min Rds On): 15V, Part Status: Active, Supplier Device Package: TO-247-4L, Vgs(th) (Max) @ Id: 3.6V @ 9.22mA, Power Dissipation (Max): 326W (Tc), Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V, Current - Continuous Drain (Id) @ 25°C: 97A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Packaging: Tube.