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Technische Details C3M0025065K Wolfspeed
Description: GEN 3 650V 25 M SIC MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 600 V, Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 15 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): +19V, -8V, Drive Voltage (Max Rds On, Min Rds On): 15V, Part Status: Active, Supplier Device Package: TO-247-4L, Vgs(th) (Max) @ Id: 3.6V @ 9.22mA, Power Dissipation (Max): 326W (Tc), Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V, Current - Continuous Drain (Id) @ 25°C: 97A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Packaging: Tube.
Weitere Produktangebote C3M0025065K nach Preis ab 12.08 EUR bis 27.54 EUR
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C3M0025065K | Wolfspeed |
 Trans MOSFET N-CH SiC 650V 97A 4-Pin(4+Tab) TO-247 Tube |
auf Bestellung 900 Stücke: Lieferzeit 14-21 Tag (e) |
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C3M0025065K | Wolfspeed |
Trans MOSFET N-CH SiC 650V 97A 4-Pin(4+Tab) TO-247 Tube |
auf Bestellung 209 Stücke: Lieferzeit 14-21 Tag (e) |
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C3M0025065K | Wolfspeed |
Trans MOSFET N-CH SiC 650V 97A 4-Pin(4+Tab) TO-247 Tube |
auf Bestellung 180 Stücke: Lieferzeit 14-21 Tag (e) |
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C3M0025065K | Wolfspeed |
Trans MOSFET N-CH SiC 650V 97A 4-Pin(4+Tab) TO-247 Tube |
auf Bestellung 405 Stücke: Lieferzeit 14-21 Tag (e) |
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C3M0025065K | Wolfspeed |
Trans MOSFET N-CH SiC 650V 97A 4-Pin(4+Tab) TO-247 Tube |
auf Bestellung 405 Stücke: Lieferzeit 14-21 Tag (e) |
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C3M0025065K | Wolfspeed |
SiC MOSFETs 650V MOSFET 25mOHMS SiC MOSFET |
auf Bestellung 11 Stücke: Lieferzeit 10-14 Tag (e) |
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C3M0025065K | Wolfspeed, Inc. |
Description: GEN 3 650V 25 M SIC MOSFET Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 600 V Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 15 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +19V, -8V Drive Voltage (Max Rds On, Min Rds On): 15V Part Status: Active Supplier Device Package: TO-247-4L Vgs(th) (Max) @ Id: 3.6V @ 9.22mA Power Dissipation (Max): 326W (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V Current - Continuous Drain (Id) @ 25°C: 97A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Packaging: Tube |
auf Bestellung 669 Stücke: Lieferzeit 10-14 Tag (e) |
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| C3M0025065K |
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Hersteller: Wolfspeed
Trans MOSFET N-CH SiC 650V 97A 4-Pin(4+Tab) TO-247 Tube
Trans MOSFET N-CH SiC 650V 97A 4-Pin(4+Tab) TO-247 Tube
auf Bestellung 900 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 450+ | 12.08 EUR |
| C3M0025065K |
|
Hersteller: Wolfspeed
Trans MOSFET N-CH SiC 650V 97A 4-Pin(4+Tab) TO-247 Tube
Trans MOSFET N-CH SiC 650V 97A 4-Pin(4+Tab) TO-247 Tube
auf Bestellung 209 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 30+ | 13.02 EUR |
| C3M0025065K |
|
Hersteller: Wolfspeed
Trans MOSFET N-CH SiC 650V 97A 4-Pin(4+Tab) TO-247 Tube
Trans MOSFET N-CH SiC 650V 97A 4-Pin(4+Tab) TO-247 Tube
auf Bestellung 180 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 30+ | 13.02 EUR |
| C3M0025065K |
|
Hersteller: Wolfspeed
Trans MOSFET N-CH SiC 650V 97A 4-Pin(4+Tab) TO-247 Tube
Trans MOSFET N-CH SiC 650V 97A 4-Pin(4+Tab) TO-247 Tube
auf Bestellung 405 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 21.84 EUR |
| 10+ | 19.81 EUR |
| C3M0025065K |
|
Hersteller: Wolfspeed
Trans MOSFET N-CH SiC 650V 97A 4-Pin(4+Tab) TO-247 Tube
Trans MOSFET N-CH SiC 650V 97A 4-Pin(4+Tab) TO-247 Tube
auf Bestellung 405 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 22.02 EUR |
| 10+ | 19.54 EUR |
| C3M0025065K |
|
Hersteller: Wolfspeed
SiC MOSFETs 650V MOSFET 25mOHMS SiC MOSFET
SiC MOSFETs 650V MOSFET 25mOHMS SiC MOSFET
auf Bestellung 11 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 26.43 EUR |
| 10+ | 15.14 EUR |
| 120+ | 14.08 EUR |
| 510+ | 13.7 EUR |
| C3M0025065K |
|
Hersteller: Wolfspeed, Inc.
Description: GEN 3 650V 25 M SIC MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 600 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 15 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +19V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 3.6V @ 9.22mA
Power Dissipation (Max): 326W (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Description: GEN 3 650V 25 M SIC MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 600 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 15 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +19V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 3.6V @ 9.22mA
Power Dissipation (Max): 326W (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
auf Bestellung 669 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 27.54 EUR |
| 30+ | 16.68 EUR |
| 60+ | 15.4 EUR |
| 120+ | 14.32 EUR |
| 510+ | 12.91 EUR |