C3M0025075K1 Wolfspeed
| Anzahl | Preis |
|---|---|
| 1+ | 19.04 EUR |
| 10+ | 15.05 EUR |
| 120+ | 12.9 EUR |
| 510+ | 11.74 EUR |
| 1020+ | 11.51 EUR |
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Technische Details C3M0025075K1 Wolfspeed
Description: SICFET N-CH 750V 80A TO247, Current - Continuous Drain (Id) @ 25°C: 80A (Ta), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 3055 pF @ 500 V, Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 15 V, Drain to Source Voltage (Vdss): 750 V, Vgs (Max): -8V, +19V, Drive Voltage (Max Rds On, Min Rds On): 15V, Supplier Device Package: TO-247-4L, Vgs(th) (Max) @ Id: 3.8V @ 9.22mA, Power Dissipation (Max): 262W (Tc), Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V.
Weitere Produktangebote C3M0025075K1 nach Preis ab 26.03 EUR bis 35.09 EUR
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C3M0025075K1 | Wolfspeed, Inc. |
 Description: SICFET N-CH 750V 80A TO247Current - Continuous Drain (Id) @ 25°C: 80A (Ta) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 3055 pF @ 500 V Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 15 V Drain to Source Voltage (Vdss): 750 V Vgs (Max): -8V, +19V Drive Voltage (Max Rds On, Min Rds On): 15V Supplier Device Package: TO-247-4L Vgs(th) (Max) @ Id: 3.8V @ 9.22mA Power Dissipation (Max): 262W (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V |
auf Bestellung 96 Stücke: Lieferzeit 10-14 Tag (e) |
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| C3M0025075K1 |
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Hersteller: Wolfspeed, Inc.
Description: SICFET N-CH 750V 80A TO247
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 3055 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 15 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): -8V, +19V
Drive Voltage (Max Rds On, Min Rds On): 15V
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 3.8V @ 9.22mA
Power Dissipation (Max): 262W (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Description: SICFET N-CH 750V 80A TO247
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 3055 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 15 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): -8V, +19V
Drive Voltage (Max Rds On, Min Rds On): 15V
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 3.8V @ 9.22mA
Power Dissipation (Max): 262W (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
auf Bestellung 96 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 35.09 EUR |
| 10+ | 28.08 EUR |
| 30+ | 26.03 EUR |