C3M0040120J1-TR Wolfspeed, Inc.
Hersteller: Wolfspeed, Inc.Description: 1200V 40 M SIC MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 53.5mOhm @ 33.3A, 15V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.2mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 1000 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 800+ | 29.85 EUR |
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Technische Details C3M0040120J1-TR Wolfspeed, Inc.
Description: 1200V 40 M SIC MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 64A (Tc), Rds On (Max) @ Id, Vgs: 53.5mOhm @ 33.3A, 15V, Power Dissipation (Max): 272W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 9.2mA, Supplier Device Package: TO-263-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +15V, -4V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 1000 V.
Weitere Produktangebote C3M0040120J1-TR nach Preis ab 29.5 EUR bis 45 EUR
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C3M0040120J1-TR | Hersteller : Wolfspeed |
MOSFET SiC, MOSFET, 40mO, 1200V, TO-263-7XL T&R, Industrial |
auf Bestellung 780 Stücke: Lieferzeit 10-14 Tag (e) |
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C3M0040120J1-TR | Hersteller : Wolfspeed, Inc. |
Description: 1200V 40 M SIC MOSFET Packaging: Cut Tape (CT) Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 53.5mOhm @ 33.3A, 15V Power Dissipation (Max): 272W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 9.2mA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +15V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 1000 V |
auf Bestellung 1520 Stücke: Lieferzeit 10-14 Tag (e) |
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| C3M0040120J1-TR | Hersteller : Wolfspeed |
C3M0040120J1-TR |
Produkt ist nicht verfügbar |