C3M0040120J1 Wolfspeed
| Anzahl | Preis |
|---|---|
| 1+ | 18.36 EUR |
| 10+ | 11.05 EUR |
| 100+ | 11.04 EUR |
| 500+ | 10.98 EUR |
| 1000+ | 10.26 EUR |
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Technische Details C3M0040120J1 Wolfspeed
Description: 1200V 40 M SIC MOSFET, Rds On (Max) @ Id, Vgs: 53.5mOhm @ 33.3A, 15V, Current - Continuous Drain (Id) @ 25°C: 64A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 1000 V, Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 15 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +15V, -4V, Drive Voltage (Max Rds On, Min Rds On): 15V, Part Status: Active, Supplier Device Package: TO-263-7, Vgs(th) (Max) @ Id: 3.6V @ 9.2mA, Power Dissipation (Max): 272W (Tc).
Weitere Produktangebote C3M0040120J1 nach Preis ab 26.97 EUR bis 46.27 EUR
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C3M0040120J1 | Wolfspeed, Inc. |
 Description: 1200V 40 M SIC MOSFETRds On (Max) @ Id, Vgs: 53.5mOhm @ 33.3A, 15V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 1000 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 15 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +15V, -4V Drive Voltage (Max Rds On, Min Rds On): 15V Part Status: Active Supplier Device Package: TO-263-7 Vgs(th) (Max) @ Id: 3.6V @ 9.2mA Power Dissipation (Max): 272W (Tc) |
auf Bestellung 251 Stücke: Lieferzeit 10-14 Tag (e) |
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| C3M0040120J1 |
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Hersteller: Wolfspeed, Inc.
Description: 1200V 40 M SIC MOSFET
Rds On (Max) @ Id, Vgs: 53.5mOhm @ 33.3A, 15V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +15V, -4V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 3.6V @ 9.2mA
Power Dissipation (Max): 272W (Tc)
Description: 1200V 40 M SIC MOSFET
Rds On (Max) @ Id, Vgs: 53.5mOhm @ 33.3A, 15V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +15V, -4V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 3.6V @ 9.2mA
Power Dissipation (Max): 272W (Tc)
auf Bestellung 251 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 46.27 EUR |
| 50+ | 27.48 EUR |
| 100+ | 26.97 EUR |