C3M0040120J1 Wolfspeed
| Anzahl | Privatkunde |
|---|---|
| 1+ | 20.8 EUR |
| 10+ | 11.78 EUR |
| 100+ | 11.69 EUR |
| 500+ | 11.63 EUR |
| 1000+ | 10.86 EUR |
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Lieferzeit:
10-14 Tag (e)
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Technische Details C3M0040120J1 Wolfspeed
Description: 1200V 40 M SIC MOSFET, Packaging: Tube, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 64A (Tc), Rds On (Max) @ Id, Vgs: 53.5mOhm @ 33.3A, 15V, Power Dissipation (Max): 272W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 9.2mA, Supplier Device Package: TO-263-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +15V, -4V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 1000 V.
Weitere Produktangebote C3M0040120J1 nach Preis ab 22.02 EUR bis 55.06 EUR
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C3M0040120J1 | Wolfspeed |
 SiC, MOSFET, 40mΩ, 1200V, TO-263-7XL, Industrial, Gen 3 |
auf Bestellung 150 Stücke: Lieferzeit 14-21 Tag (e) |
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C3M0040120J1 | Wolfspeed, Inc. |
Description: 1200V 40 M SIC MOSFET Packaging: Tube Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 53.5mOhm @ 33.3A, 15V Power Dissipation (Max): 272W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 9.2mA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +15V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 1000 V |
auf Bestellung 251 Stücke: Lieferzeit 10-14 Tag (e) |
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| C3M0040120J1 |
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Hersteller: Wolfspeed
SiC, MOSFET, 40mΩ, 1200V, TO-263-7XL, Industrial, Gen 3
SiC, MOSFET, 40mΩ, 1200V, TO-263-7XL, Industrial, Gen 3
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 50+ | 22.02 EUR |
| C3M0040120J1 |
|
Hersteller: Wolfspeed, Inc.
Description: 1200V 40 M SIC MOSFET
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 53.5mOhm @ 33.3A, 15V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.2mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 1000 V
Description: 1200V 40 M SIC MOSFET
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 53.5mOhm @ 33.3A, 15V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.2mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 1000 V
auf Bestellung 251 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 55.06 EUR |
| 50+ | 32.7 EUR |
| 100+ | 32.09 EUR |