| Anzahl | Privatkunde |
|---|---|
| 1+ | 23.95 EUR |
| 10+ | 15.18 EUR |
| 120+ | 13.03 EUR |
| 510+ | 12.46 EUR |
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Technische Details C3M0045065D Wolfspeed
Description: GEN 3 650V 45 M SIC MOSFET, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 49A (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V, Power Dissipation (Max): 176W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 4.84mA, Supplier Device Package: TO-247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +19V, -8V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 600 V.
Weitere Produktangebote C3M0045065D nach Preis ab 23.16 EUR bis 40.32 EUR
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C3M0045065D | Wolfspeed, Inc. |
 Description: GEN 3 650V 45 M SIC MOSFETPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V Power Dissipation (Max): 176W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 4.84mA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 600 V |
auf Bestellung 454 Stücke: Lieferzeit 10-14 Tag (e) |
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| C3M0045065D |
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Hersteller: Wolfspeed, Inc.
Description: GEN 3 650V 45 M SIC MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 600 V
Description: GEN 3 650V 45 M SIC MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 600 V
auf Bestellung 454 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 40.32 EUR |
| 30+ | 25.17 EUR |
| 120+ | 23.16 EUR |