C3M0060065J Wolfspeed
Hersteller: Wolfspeed650V silicon carbide MOSFET technology optimized for high performance power electronics applications
auf Bestellung 206 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 11+ | 14.22 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details C3M0060065J Wolfspeed
Description: SICFET N-CH 650V 36A TO263-7, Packaging: Tube, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V, Power Dissipation (Max): 136W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 5mA, Supplier Device Package: TO-263-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +15V, -4V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 600 V.
Weitere Produktangebote C3M0060065J nach Preis ab 11.66 EUR bis 40.04 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
C3M0060065J | Hersteller : Wolfspeed |
Trans MOSFET N-CH SiC 650V 36A Automotive 8-Pin(7+Tab) TO-263 Tube |
auf Bestellung 2642 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
C3M0060065J | Hersteller : Wolfspeed |
650V silicon carbide MOSFET technology optimized for high performance power electronics applications |
auf Bestellung 2600 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
C3M0060065J | Hersteller : Wolfspeed |
Trans MOSFET N-CH SiC 650V 36A Automotive 8-Pin(7+Tab) TO-263 Tube |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
C3M0060065J | Hersteller : Wolfspeed |
650V silicon carbide MOSFET technology optimized for high performance power electronics applications |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
C3M0060065J | Hersteller : Wolfspeed, Inc. |
Description: SICFET N-CH 650V 36A TO263-7 Packaging: Tube Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 5mA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +15V, -4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 600 V |
auf Bestellung 3995 Stücke: Lieferzeit 21-28 Tag (e) |
|
||||||||||||||||
 |
C3M0060065J | Hersteller : Wolfspeed | MOSFET SiC, MOSFET, 60mO, 650V, TO-263-7, Industrial, Gen 3 |
auf Bestellung 1539 Stücke: Lieferzeit 14-28 Tag (e) |
|
||||||||||||||||
| C3M0060065J | Hersteller : Wolfspeed |
C3M0060065J |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||||
|
|
C3M0060065J | Hersteller : Wolfspeed |
Trans MOSFET N-CH SiC 650V 36A Automotive 8-Pin(7+Tab) TO-263 Tube |
Produkt ist nicht verfügbar |
|||||||||||||||||
| C3M0060065J | Hersteller : Wolfspeed(CREE) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 99A; 136W Type of transistor: N-MOSFET Technology: C3M™; SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 26A Pulsed drain current: 99A Power dissipation: 136W Case: D2PAK-7 Gate-source voltage: -8...19V On-state resistance: 80mΩ Mounting: SMD Gate charge: 46nC Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
| C3M0060065J | Hersteller : Wolfspeed(CREE) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 99A; 136W Type of transistor: N-MOSFET Technology: C3M™; SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 26A Pulsed drain current: 99A Power dissipation: 136W Case: D2PAK-7 Gate-source voltage: -8...19V On-state resistance: 80mΩ Mounting: SMD Gate charge: 46nC Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |