C3M0060065L-TR Wolfspeed
| Anzahl | Preis |
|---|---|
| 1+ | 13.62 EUR |
| 10+ | 9.33 EUR |
| 100+ | 7.43 EUR |
| 1000+ | 6.95 EUR |
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Technische Details C3M0060065L-TR Wolfspeed
Description: SIC, MOSFET, 60M, 650V, TOLL, IN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 39A (Tc), Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V, Power Dissipation (Max): 131W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 3.64mA, Supplier Device Package: TOLL, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +19V, -8V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 400 V.
Weitere Produktangebote C3M0060065L-TR nach Preis ab 9.77 EUR bis 16.76 EUR
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C3M0060065L-TR | Wolfspeed, Inc. |
 Description: SIC, MOSFET, 60M, 650V, TOLL, INPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V Power Dissipation (Max): 131W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 3.64mA Supplier Device Package: TOLL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 400 V |
auf Bestellung 1156 Stücke: Lieferzeit 10-14 Tag (e) |
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| C3M0060065L-TR |
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Hersteller: Wolfspeed, Inc.
Description: SIC, MOSFET, 60M, 650V, TOLL, IN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 3.64mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 400 V
Description: SIC, MOSFET, 60M, 650V, TOLL, IN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 3.64mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 400 V
auf Bestellung 1156 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 16.76 EUR |
| 10+ | 11.6 EUR |
| 100+ | 9.77 EUR |