Technische Details C3M0075120K-A Wolfspeed
Description: 75M 1200V 175C SIC FET, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V, Power Dissipation (Max): 136W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 5mA, Supplier Device Package: TO-247-4L, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +15V, -4V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 1000 V.
Weitere Produktangebote C3M0075120K-A nach Preis ab 19.54 EUR bis 34.41 EUR
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C3M0075120K-A | MACOM |
 MOSFET SiC, MOSFET, 75mohm, 1200V, TO-247-4, 175C capable, Industrial, G3 |
auf Bestellung 880 Stücke: Lieferzeit 10-14 Tag (e) |
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C3M0075120K-A | Wolfspeed, Inc. |
Description: 75M 1200V 175C SIC FET Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 5mA Supplier Device Package: TO-247-4L Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +15V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 1000 V |
auf Bestellung 221 Stücke: Lieferzeit 10-14 Tag (e) |
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| C3M0075120K-A |
|
Hersteller: MACOM
MOSFET SiC, MOSFET, 75mohm, 1200V, TO-247-4, 175C capable, Industrial, G3
MOSFET SiC, MOSFET, 75mohm, 1200V, TO-247-4, 175C capable, Industrial, G3
auf Bestellung 880 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 32.19 EUR |
| 10+ | 28.37 EUR |
| 30+ | 27.6 EUR |
| 60+ | 26.07 EUR |
| 120+ | 24.53 EUR |
| 270+ | 23.76 EUR |
| 510+ | 22.23 EUR |
| C3M0075120K-A |
|
Hersteller: Wolfspeed, Inc.
Description: 75M 1200V 175C SIC FET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 1000 V
Description: 75M 1200V 175C SIC FET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 1000 V
auf Bestellung 221 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 34.41 EUR |
| 30+ | 21.65 EUR |
| 120+ | 19.54 EUR |