C3M0075120K1 Wolfspeed
| Anzahl | Preis |
|---|---|
| 1+ | 18.43 EUR |
| 10+ | 14.98 EUR |
| 120+ | 12.5 EUR |
| 510+ | 11.12 EUR |
| 1020+ | 9.47 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details C3M0075120K1 Wolfspeed
Description: MOSFET N-CH 1200V 32A TO247-4L, Packaging: Bulk, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), Rds On (Max) @ Id, Vgs: 97.5mOhm @ 17.9A, 15V, Power Dissipation (Max): 145W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 5mA, Supplier Device Package: TO-247-4L, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +19V, -8V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 1000 V.
Weitere Produktangebote C3M0075120K1 nach Preis ab 15.22 EUR bis 23.94 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
C3M0075120K1 | Wolfspeed, Inc. |
 Description: MOSFET N-CH 1200V 32A TO247-4LPackaging: Bulk Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 97.5mOhm @ 17.9A, 15V Power Dissipation (Max): 145W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 5mA Supplier Device Package: TO-247-4L Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 1000 V |
auf Bestellung 345 Stücke: Lieferzeit 10-14 Tag (e) |
|
| C3M0075120K1 |
|
Hersteller: Wolfspeed, Inc.
Description: MOSFET N-CH 1200V 32A TO247-4L
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 17.9A, 15V
Power Dissipation (Max): 145W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 5mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 1000 V
Description: MOSFET N-CH 1200V 32A TO247-4L
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 17.9A, 15V
Power Dissipation (Max): 145W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 5mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 1000 V
auf Bestellung 345 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 23.94 EUR |
| 30+ | 16.92 EUR |
| 120+ | 15.22 EUR |