C3M0120065J Wolfspeed
| Anzahl | Privatkunde |
|---|---|
| 18+ | 9.78 EUR |
| 19+ | 8.91 EUR |
| 25+ | 8.53 EUR |
| 50+ | 8.12 EUR |
| 100+ | 7.03 EUR |
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Technische Details C3M0120065J Wolfspeed
Description: 650V 120M SIC MOSFET, Packaging: Tube, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Rds On (Max) @ Id, Vgs: 157mOhm @ 6.76A, 15V, Power Dissipation (Max): 86W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 1.86mA, Supplier Device Package: TO-263-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +19V, -8V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 400 V.
Weitere Produktangebote C3M0120065J nach Preis ab 9.95 EUR bis 17.06 EUR
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C3M0120065J | Wolfspeed |
 SiC MOSFETs SiC, MOSFET, 120mohm, 650V, TO-263-7, Industrial |
auf Bestellung 2564 Stücke: Lieferzeit 10-14 Tag (e) |
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C3M0120065J | Wolfspeed, Inc. |
Description: 650V 120M SIC MOSFET Packaging: Tube Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 157mOhm @ 6.76A, 15V Power Dissipation (Max): 86W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1.86mA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 400 V |
auf Bestellung 1344 Stücke: Lieferzeit 10-14 Tag (e) |
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| C3M0120065J |
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Hersteller: Wolfspeed
SiC MOSFETs SiC, MOSFET, 120mohm, 650V, TO-263-7, Industrial
SiC MOSFETs SiC, MOSFET, 120mohm, 650V, TO-263-7, Industrial
auf Bestellung 2564 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 15.14 EUR |
| 10+ | 9.95 EUR |
| C3M0120065J |
|
Hersteller: Wolfspeed, Inc.
Description: 650V 120M SIC MOSFET
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 157mOhm @ 6.76A, 15V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1.86mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 400 V
Description: 650V 120M SIC MOSFET
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 157mOhm @ 6.76A, 15V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1.86mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 400 V
auf Bestellung 1344 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 17.06 EUR |
| 10+ | 13.27 EUR |
| 50+ | 11.75 EUR |
| 100+ | 11.27 EUR |
| 250+ | 10.78 EUR |
| 500+ | 10.47 EUR |
| 1000+ | 10.23 EUR |