C3M0120090J Wolfspeed
auf Bestellung 650 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
50+ | 10.26 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details C3M0120090J Wolfspeed
Description: SICFET N-CH 900V 22A D2PAK-7, Packaging: Tube, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 3mA, Supplier Device Package: TO-263-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +18V, -8V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 600 V.
Weitere Produktangebote C3M0120090J nach Preis ab 11.27 EUR bis 29.43 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
C3M0120090J | Hersteller : Wolfspeed(CREE) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 22A; 83W; D2PAK-7; 24ns Type of transistor: N-MOSFET Power dissipation: 83W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 17.3nC Technology: C3M™; SiC Kind of channel: enhanced Gate-source voltage: -8...19V Mounting: SMD Case: D2PAK-7 Reverse recovery time: 24ns Drain-source voltage: 900V Drain current: 22A On-state resistance: 0.12Ω Anzahl je Verpackung: 1 Stücke |
auf Bestellung 144 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||||
C3M0120090J | Hersteller : Wolfspeed(CREE) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 22A; 83W; D2PAK-7; 24ns Type of transistor: N-MOSFET Power dissipation: 83W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 17.3nC Technology: C3M™; SiC Kind of channel: enhanced Gate-source voltage: -8...19V Mounting: SMD Case: D2PAK-7 Reverse recovery time: 24ns Drain-source voltage: 900V Drain current: 22A On-state resistance: 0.12Ω |
auf Bestellung 144 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
C3M0120090J | Hersteller : Wolfspeed, Inc. |
Description: SICFET N-CH 900V 22A D2PAK-7 Packaging: Tube Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 3mA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +18V, -8V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 600 V |
auf Bestellung 6437 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
C3M0120090J | Hersteller : Wolfspeed | MOSFET G3 SiC MOSFET 900V, 120 mOhm |
auf Bestellung 1047 Stücke: Lieferzeit 14-28 Tag (e) |
|
|||||||||||||||||
C3M0120090J | Hersteller : CREE |
N-MOSFET 900V 22A C3M0120090J-TR C3M0120090J Cree/Wolfspeed TC3M0120090J Anzahl je Verpackung: 2 Stücke |
auf Bestellung 2 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||||
C3M0120090J | Hersteller : Wolfspeed | Trans MOSFET N-CH SiC 900V 22A Automotive 8-Pin(7+Tab) D2PAK |
auf Bestellung 650 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||||
C3M0120090J Produktcode: 126112 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
|
|||||||||||||||||||
C3M0120090J | Hersteller : Wolfspeed | Trans MOSFET N-CH SiC 900V 22A Automotive 8-Pin(7+Tab) D2PAK |
Produkt ist nicht verfügbar |
||||||||||||||||||
C3M0120090J | Hersteller : Wolfspeed | Trans MOSFET N-CH SiC 900V 22A Automotive 8-Pin(7+Tab) D2PAK |
Produkt ist nicht verfügbar |