Weitere Produktangebote C3M0120090J nach Preis ab 13.35 EUR bis 32.27 EUR
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C3M0120090J | Wolfspeed |
 MOSFET G3 SiC MOSFET 900V, 120 mOhm |
auf Bestellung 1047 Stücke: Lieferzeit 10-14 Tag (e) |
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C3M0120090J | Wolfspeed, Inc. |
Description: SICFET N-CH 900V 22A D2PAK-7 Packaging: Tube Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 3mA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +18V, -8V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 600 V |
auf Bestellung 4242 Stücke: Lieferzeit 10-14 Tag (e) |
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C3M0120090J | CREE |
N-MOSFET 900V 22A C3M0120090J-TR C3M0120090J Cree/Wolfspeed TC3M0120090J Anzahl je Verpackung: 2 Stücke |
auf Bestellung 2 Stücke: Lieferzeit 7-14 Tag (e) |
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| C3M0120090J |
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Hersteller: Wolfspeed
MOSFET G3 SiC MOSFET 900V, 120 mOhm
MOSFET G3 SiC MOSFET 900V, 120 mOhm
auf Bestellung 1047 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 23.7 EUR |
| 10+ | 20.81 EUR |
| 50+ | 20.17 EUR |
| 100+ | 17.5 EUR |
| 250+ | 17.26 EUR |
| 500+ | 15.41 EUR |
| 1000+ | 15.05 EUR |
| C3M0120090J |
|
Hersteller: Wolfspeed, Inc.
Description: SICFET N-CH 900V 22A D2PAK-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 600 V
Description: SICFET N-CH 900V 22A D2PAK-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 600 V
auf Bestellung 4242 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 27.25 EUR |
| 50+ | 15.68 EUR |
| 100+ | 14.58 EUR |
| 500+ | 13.35 EUR |
| C3M0120090J |
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Hersteller: CREE
N-MOSFET 900V 22A C3M0120090J-TR C3M0120090J Cree/Wolfspeed TC3M0120090J
Anzahl je Verpackung: 2 Stücke
N-MOSFET 900V 22A C3M0120090J-TR C3M0120090J Cree/Wolfspeed TC3M0120090J
Anzahl je Verpackung: 2 Stücke
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 32.27 EUR |