Weitere Produktangebote C3M0120100K nach Preis ab 15.44 EUR bis 23.72 EUR
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C3M0120100K | Wolfspeed |
 MOSFET 1000V 120mOhm G3 SiC MOSFET TO-247-4 |
auf Bestellung 1100 Stücke: Lieferzeit 10-14 Tag (e) |
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C3M0120100K | Wolfspeed, Inc. |
Description: SICFET N-CH 1000V 22A TO247-4L Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 3mA Supplier Device Package: TO-247-4L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 600 V |
auf Bestellung 2524 Stücke: Lieferzeit 10-14 Tag (e) |
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C3M0120100K | MACOM |
MOSFET 1000V 120mOhm G3 SiC MOSFET TO-247-4 |
auf Bestellung 1250 Stücke: Lieferzeit 10-14 Tag (e) |
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| C3M0120100K |
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Hersteller: Wolfspeed
MOSFET 1000V 120mOhm G3 SiC MOSFET TO-247-4
MOSFET 1000V 120mOhm G3 SiC MOSFET TO-247-4
auf Bestellung 1100 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 19.2 EUR |
| 30+ | 16.76 EUR |
| C3M0120100K |
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Hersteller: Wolfspeed, Inc.
Description: SICFET N-CH 1000V 22A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 600 V
Description: SICFET N-CH 1000V 22A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 600 V
auf Bestellung 2524 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 19.87 EUR |
| 30+ | 15.44 EUR |
| C3M0120100K |
|
Hersteller: MACOM
MOSFET 1000V 120mOhm G3 SiC MOSFET TO-247-4
MOSFET 1000V 120mOhm G3 SiC MOSFET TO-247-4
auf Bestellung 1250 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 23.72 EUR |
| 10+ | 21.07 EUR |
| 30+ | 20.56 EUR |
| 60+ | 18.3 EUR |
| 120+ | 17.62 EUR |
| 270+ | 16.76 EUR |